Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates
نویسندگان
چکیده
In this paper, we report on the structural and optical properties of n-type Si-doped p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without were also for comparison purposes (n-type GaAs). X-ray diffraction, micro-Raman at room temperature, photoluminescence (PL) measurements as a function temperature laser excitation power (PEXC) performed to investigate their properties. diffraction results revealed that incorporation in both doped GaAsBi was similar, despite present remarkable differences number related defects, non-radiative centers alloy disorder. Particularly, our evidence Bi-related defects n- p-doped alloys have important impact
منابع مشابه
Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy
GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show...
متن کاملStructural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused ...
متن کاملOptical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy
We report photoluminescence (PL) and reflectivity measurements of Zn0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ,8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that the...
متن کاملOptical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy
Optical properties of GaInP/GaAs:Er,O/GaInP double heterostructure (DH) laser diodes (LDs) grown by organometallic vapor phase epitaxy (OMVPE) were investigated. The Er-doped LDs showed laser emission of the GaAs band-edge. The threshold current density (Jth) was 3.6 kA/cm on the n-type GaAs substrates and 15.8 kA/cm on the p-type at 77 K. The Er-doped LDs on the n-type substrate showed a stron...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2021
ISSN: ['0268-1242', '1361-6641']
DOI: https://doi.org/10.1088/1361-6641/abf3d1